Análise de dissipadores de calor com filmes de diamante CVD
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Data
2008-06-27
Autores
Souza, Teófilo Miguel de [UNESP]
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Editor
Universidade Estadual Paulista (Unesp)
Resumo
Dissipadores de calor recobertos com filmes de diamante CVD foram desenvolvidos para acoplar a semicondutores, utilizando-se do Laboratório de Deposição de Filmes de Diamante CVD, na UNESP - Campus de Guaratinguetá e o Laboratório de Diamantes da Universidade São Francisco, em Itatiba, SP. Analisou-se o filme de diamante CVD sobre o silício, para emprego como dissipador de calor, porque o filme de diamante CVD pode ter o valor da condutividade térmica até cinco vezes superior ao do cobre e de dez vezes a do alumínio. Os filmes foram obtidos via deposição através de reator de filamento quente, trabalhando-se com vários filamentos retilíneos em paralelo, resultando assim em um processo que visou obter um filme mais uniforme e com grande área de deposição. Os dados para análises da composição química superficial dos filmes foram obtidos por Difração de Raios-X, Dispersão de Energia de Raios-X e para a verificação da morfologia e espessura do filme foi utilizada a Microscopia Eletrônica de Varredura. Para a verificação do comportamento da temperatura sobre o dissipador com o filme de diamante CVD foi utilizada uma câmera de imagem termográfica, marca Fluke, modelo Ti 40 FT. Foram obtidos filmes de 2 e 10 ?m sobre o silício. Estas espessuras ainda não oferecem um desempenho mecânico que o torne autosustentado. Do ponto de vista de desempenho térmico as análises mostraram que, mesmo com pequena espessura, o filme de diamante CVD apresentou bom resultado experimental. Os principais desafios de construção para esse dissipador de calor são a obtenção do filme com espessura acima de um mm e a garantia da qualidade do filme com a repetitividade do processo em cujo caso torna-se necessário definir as dimensões do dissipador antes da deposição do filme.
Heat sinks recovered with policrystalized CVD diamond films were developed to apply in semiconductors, using the facilities of the CVD diamond Laboratory - UNESP-Campus de Guaratinguetá and the Diamond Laboratory at the São Francisco University, Itatiba – SP. The analysis of the CVD diamond film deposited on silicon intended for semiconductor heat sinks was due to the fact that the CVD diamond film presents a higher thermic conductivity up to five times in comparison to copper and ten times as compared to aluminum. The films were obtained by the hot filament reactor deposition, in which several straight filaments were placed in parallel so to acquire a uniform film covering a large deposition area. Data for the superficial chemical composition for the film analysis were gathered from the results of the X-ray Diffraction and Energy Dispersive X-ray. The electronic microscopy scanning was employed for the morphological identity and thickness of the film. A Fluke camera model Ti 40 FT specifically intended for thermografic image was employed to register the temperature behavior in the heatsinks deposited with CVD diamond film. Film depositions with 2 and 10 ?m were obtained on silicon. Meanwhile, these thickness do not offer a mechanic performance to make them self sustained. From the thermal performance point of view those analysis demonstrated that, although the thin thickness of the CVD diamond film deposition it presented good experimental results. The main challenge in the construction of this kind of heatsink is in building the film thickness higher than 1 mm and the guarantee of the film quality maintaining the process repetitivity. Moreover, once the film has been deposited, it is impractical to try to cut it to any other dimensions in which case it becomes necessary to prepare the material to dimension before the CVD diamond film deposition.
Heat sinks recovered with policrystalized CVD diamond films were developed to apply in semiconductors, using the facilities of the CVD diamond Laboratory - UNESP-Campus de Guaratinguetá and the Diamond Laboratory at the São Francisco University, Itatiba – SP. The analysis of the CVD diamond film deposited on silicon intended for semiconductor heat sinks was due to the fact that the CVD diamond film presents a higher thermic conductivity up to five times in comparison to copper and ten times as compared to aluminum. The films were obtained by the hot filament reactor deposition, in which several straight filaments were placed in parallel so to acquire a uniform film covering a large deposition area. Data for the superficial chemical composition for the film analysis were gathered from the results of the X-ray Diffraction and Energy Dispersive X-ray. The electronic microscopy scanning was employed for the morphological identity and thickness of the film. A Fluke camera model Ti 40 FT specifically intended for thermografic image was employed to register the temperature behavior in the heatsinks deposited with CVD diamond film. Film depositions with 2 and 10 ?m were obtained on silicon. Meanwhile, these thickness do not offer a mechanic performance to make them self sustained. From the thermal performance point of view those analysis demonstrated that, although the thin thickness of the CVD diamond film deposition it presented good experimental results. The main challenge in the construction of this kind of heatsink is in building the film thickness higher than 1 mm and the guarantee of the film quality maintaining the process repetitivity. Moreover, once the film has been deposited, it is impractical to try to cut it to any other dimensions in which case it becomes necessary to prepare the material to dimension before the CVD diamond film deposition.
Descrição
Palavras-chave
Aparelhos e materiais eletricos, Filmes finos, Diamante, Calor
Como citar
SOUZA, Teófilo Miguel de. Análise de dissipadores de calor com filmes de diamante CVD. 2008. 59 f. Tese (livre-docência) - Universidade Estadual Paulista, Faculdade de Engenharia de Guaratinguetá, 2008.