Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films

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Data

2009-01-01

Autores

Fraga, M. A.
Massi, M.
Oliveira, I. C.
Cruz, Nilson Cristino da [UNESP]
Santos Filho, S. G. dos

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Editor

Trans Tech Publications Ltd

Resumo

Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.

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Palavras-chave

Silicon carbon nitride, Thermal annealing, Resistivity, Elastic modulus, Hardness

Como citar

Materials Science Forum, v. 615 617, p. 327-330.