Preparação e caracterização de um transistor orgânico de efeito de campo com arquitetura vertical
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Data
2016-08-26
Autores
Nogueira, Gabriel Leonardo [UNESP]
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Universidade Estadual Paulista (Unesp)
Resumo
O transistor orgânico de efeito de campo com arquitetura vertical (VOFET) possibilita contornar as principais limitações de um transistor orgânico de efeito de campo (OFET) convencional. Nesta estrutura, as camadas são empilhadas verticalmente, de modo que os eletrodos de fonte e dreno são separados pela camada semicondutora e o comprimento do canal definido pela espessura do filme semicondutor. Para o VOFET proposto, utilizou-se Al e Al2O3 (obtido por anodização) como eletrodo e dielétrico de gate, respectivamente. O filme semicondutor foi obtido pela deposição por spincoating de P3HT dissolvido em clorofórmio. Os eletrodos de fonte e dreno foram obtidos por evaporação térmica a vácuo. Ao utilizar Al e Au como fonte e dreno, respectivamente, foi possível estudar os dispositivos de dois terminais que compõe o VOFET. Com base nesses dispositivos, importantes parâmetros da estrutura vertical foram determinados, como capacitância do dielétrico (~265 nF/cm2), densidade de portadores e mobilidade do P3HT (NA = 9,2 x 1016 cm-3 e μ = 1,5x10-4 cm2V-1s-1). Para utilizar Sn como eletrodo de fonte, o filme foi avaliado por meio de medidas de resistência e capacitância, aliadas à analise morfológica por AFM. Observa-se que a adição de uma camada de PMMA sobre o Al2O3 melhora o desempenho do VOFET. Para o VOFET formado por Al2O3/PMMA (20 nm/14 nm), com Sn e Al como fonte e dreno, foram calculados os valores de densidade de corrente (Jeff = 7x10-3 mA/cm2), voltagem e campo limiar (VTH = -8V e ELIMIAR = 330 MV/m). Com isso, foi obtido um VOFET utilizando filme de Sn evaporado como eletrodo de fonte perfurado.
A way of circumvent the limitations of conventional organic field-effect transistor (OFET), is by using the vertical organic field-effect transistor (VOFET). In this structure, with layers stacked vertically, the semiconductor is sandwiched between source and drain electrodes, where the channel length is determined by the thickness of the semiconductor film. In this study, we report a VOFET with Al and Al2O3 (obtained by anodization) as electrode and dielectric of gate, respectively. The semiconductor film was obtained by spin-coating of the P3HT in chloroform. We obtained the source and drain electrodes by vacuum thermal evaporation. The use of Al and Au as source and drain, respectively, enabled the investigation of the two devices contained in the VOFET (MIM capacitor, Schottky diode and MIS capacitor). Important parameters were determinate, as dielectric capacitance (~265 nF/cm2), charrier density and mobility of P3HT (NA = 9,2 x 1016 cm-3 e μ = 1,5x10-4 cm2V-1s-1), etc. To use Sn as source electrode, the film (by evaporation) was investigated by measurements of resistance and capacitance, combined with morphological analysis by AFM. We observed that the addiction of PMMA layer on Al2O3 improves the performance of VOFET. For VOFET obtained by using Al2O3/PMMA (20 nm/14 nm) as dielectric layer, with Sn and Al as source and drain, respectively, were calculate the values of current density (Jeff = 7x10-3 mA/cm2), threshold voltage and electric field (VTH = -8V e ETH = 330 MV/m). Thereat, we obtained a VOFET by evaporation of a thin film of Sn as perforated source electrode.
A way of circumvent the limitations of conventional organic field-effect transistor (OFET), is by using the vertical organic field-effect transistor (VOFET). In this structure, with layers stacked vertically, the semiconductor is sandwiched between source and drain electrodes, where the channel length is determined by the thickness of the semiconductor film. In this study, we report a VOFET with Al and Al2O3 (obtained by anodization) as electrode and dielectric of gate, respectively. The semiconductor film was obtained by spin-coating of the P3HT in chloroform. We obtained the source and drain electrodes by vacuum thermal evaporation. The use of Al and Au as source and drain, respectively, enabled the investigation of the two devices contained in the VOFET (MIM capacitor, Schottky diode and MIS capacitor). Important parameters were determinate, as dielectric capacitance (~265 nF/cm2), charrier density and mobility of P3HT (NA = 9,2 x 1016 cm-3 e μ = 1,5x10-4 cm2V-1s-1), etc. To use Sn as source electrode, the film (by evaporation) was investigated by measurements of resistance and capacitance, combined with morphological analysis by AFM. We observed that the addiction of PMMA layer on Al2O3 improves the performance of VOFET. For VOFET obtained by using Al2O3/PMMA (20 nm/14 nm) as dielectric layer, with Sn and Al as source and drain, respectively, were calculate the values of current density (Jeff = 7x10-3 mA/cm2), threshold voltage and electric field (VTH = -8V e ETH = 330 MV/m). Thereat, we obtained a VOFET by evaporation of a thin film of Sn as perforated source electrode.
Descrição
Palavras-chave
Transistor vertical (VOFET), Eletrodo permeável, Al2O3/PMMA, VOFET, Perforated electrode