Publicação: Characterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor method
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Elsevier B.V.
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Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The dielectric constant of highly doped bismuth titanate was equal to 148 while dielectric losses remained low (tan delta = 0.0018), and the films showed well-saturated polarization-electric field curves (2P(r) = 40.6 muC/cm(2) and V-c = 0.99 V). The leakage current densities improve for the lanthanum-doped system. For five-layered BLT films with x = 0.75, a charge storage density of 35 fC/mum(2) and a thickness of 320 nm were found. (C) 2004 Elsevier B.V. All rights reserved.
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crystal structure, dielectrics, ferroelectrics, thin films
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Inglês
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Materials Letters. Amsterdam: Elsevier B.V., v. 58, n. 22-23, p. 2842-2847, 2004.
