Publicação: Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Carregando...
Data
2002-06-01
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Sociedade Brasileira de Física
Tipo
Artigo
Direito de acesso
Acesso aberto
Resumo
Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 32, n. 2a, p. 314-317, 2002.
