Publicação: Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process
Carregando...
Data
2001-03-15
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
American Institute of Physics (AIP)
Tipo
Artigo
Direito de acesso
Acesso aberto
Resumo
Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
Journal of Applied Physics. Melville: Amer Inst Physics, v. 89, n. 6, p. 3416-3419, 2001.
