Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
Carregando...
Arquivos
Fonte externa
Fonte externa
Data
Autores
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier B.V.
Tipo
Artigo
Direito de acesso
Acesso restrito
Arquivos
Fonte externa
Fonte externa
Resumo
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.
Descrição
Palavras-chave
EXAFS, gallium arsenide, GaAs, sputtering, hydrogenation
Idioma
Inglês
Citação
Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms. Amsterdam: Elsevier B.V., v. 238, n. 1-4, p. 329-333, 2005.
