Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
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Data
2004-07-01
Autores
Simoes, A. Z.
Gonzalez, AHM
Riccardi, C. S.
Souza, E. C.
Moura, F.
Zaghete, M. A.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Kluwer Academic Publ
Resumo
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2P(r) = 41.4 muC/cm(2) and V-c = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.
Descrição
Palavras-chave
bismuth lanthanum titanate, FERAM, thin film
Como citar
Journal of Electroceramics. Dordrecht: Kluwer Academic Publ, v. 13, n. 1-3, p. 65-70, 2004.