Electrical characterization of SnO2 : Sb ultrathin films obtained by controlled thickness deposition
Carregando...
Fonte externa
Fonte externa
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
American Institute of Physics (AIP)
Tipo
Artigo
Direito de acesso
Acesso aberto
Fonte externa
Fonte externa
Resumo
A representative study is reported on the electrical properties of SnO2: Sb. ultrathin films (thickness of 40-70 nm) produced by a deposition method based on aqueous colloidal suspensions of 3-5 nm crystalline oxides. The results revealed the films' electrical behavior in a range of 10-300 K, showing a strong dependence on dopant incorporation, with minimum resistivity values in 10 mol % of Sb content. All the samples displayed semiconductor behavior, but the transport mechanism showed a strong dependence on thickness, making it difficult to fit it to well-known models. In thicker films, the mechanism proved to be an intermediary system, with thermally activated and hopping features. Electron hopping was estimated in the range of 0.4-1.9 nm, i.e., in the same order as the particle size. (c) 2007 American Institute of Physics.
Descrição
Palavras-chave
Idioma
Inglês
Citação
Journal of Applied Physics. Melville: Amer Inst Physics, v. 102, n. 3, 5 p., 2007.
