Electrical characterization of SnO2 : Sb ultrathin films obtained by controlled thickness deposition
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Data
2007-08-01
Autores
Giraldi, Tania R.
Lanfredi, Alexandre J. C.
Leite, Edson R.
Escote, Marcia T.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Ribeiro, Caue
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American Institute of Physics (AIP)
Resumo
A representative study is reported on the electrical properties of SnO2: Sb. ultrathin films (thickness of 40-70 nm) produced by a deposition method based on aqueous colloidal suspensions of 3-5 nm crystalline oxides. The results revealed the films' electrical behavior in a range of 10-300 K, showing a strong dependence on dopant incorporation, with minimum resistivity values in 10 mol % of Sb content. All the samples displayed semiconductor behavior, but the transport mechanism showed a strong dependence on thickness, making it difficult to fit it to well-known models. In thicker films, the mechanism proved to be an intermediary system, with thermally activated and hopping features. Electron hopping was estimated in the range of 0.4-1.9 nm, i.e., in the same order as the particle size. (c) 2007 American Institute of Physics.
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Journal of Applied Physics. Melville: Amer Inst Physics, v. 102, n. 3, 5 p., 2007.