Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
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Data
1999-08-23
Autores
Tabata, A.
Leite, JR
Lima, A. P.
Silveira, E.
Lemos, V
Frey, T.
As, D. J.
Schikora, D.
Lischka, K.
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American Institute of Physics (AIP)
Resumo
Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6].
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Applied Physics Letters. Woodbury: Amer Inst Physics, v. 75, n. 8, p. 1095-1097, 1999.