Publication: Effect of processing conditions on the nucleation and growth of indium-tin-oxide nanowires made by pulsed laser ablation
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Date
2008-01-01
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Undergraduate course
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Springer
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Article
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Abstract
Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 degrees C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor-liquid-solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/mu m(2). After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the [100] direction. These structures have potential applications in electrical and optical nanoscale devices.
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English
Citation
Journal of Materials Science. New York: Springer, v. 43, n. 2, p. 609-613, 2008.
