Publicação: Dielectric properties of pure and lanthanum modified bismuth titanate thin films
Nenhuma Miniatura disponível
Data
2008-04-24
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier B.V. Sa
Tipo
Artigo
Direito de acesso
Acesso restrito
Resumo
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 454, n. 1-2, p. 66-71, 2008.
