Publicação: Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method
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American Institute of Physics (AIP)
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Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.
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annealing, antiferromagnetic materials, atomic force microscopy, bismuth compounds, dielectric polarisation, ferroelectric switching, ferroelectric thin films, lanthanum compounds, leakage currents, multiferroics, piezoelectricity, platinum, Raman spectra, scanning electron microscopy, silicon, silicon compounds, titanium, X-ray diffraction
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Inglês
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Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.
