Influence of TiO2 and AI(2)O(3) on the electrical and microstructural properties of SnO2 ceramics obtained by the Pechini method
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Data
2008-01-01
Autores
Mosquera, A.
Varela, José Arana [UNESP]
Caballero, A. C.
Rodriguez-Paez, J. E.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Soc Espanola Ceramica Vidrio
Resumo
Tin oxide has wakened up great scientific and technological interest for its potential use in varistors production and as gas sensor. In order to improve the microstructural and electrical properties in SnO2 varistor ceramics, the influence of differents dopants used, like TiO2 and Al2O3, is under research. The effect of TiO2 and Al2O3 on the properties of Sn-Co-Nb varistor systems obtained by the Pechini method has been investigated in this work. Characterization of synthesized raw material was performed by X-Ray Diffraction (XRD) and Scanning Electronic Microscopy (SEM). The microstructural and electrical characterization of sintered samples show that the TiO2 favors the grain growth and the Al2O3 contributes to the decrease it, effect that is manifested in the Sn-Co-Nb varistor systems. Breakdown field increase up to 6300V/cm with increasing Al2O3 content and non-linear coefficients with alpha=22 were obtained.
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Palavras-chave
varistors, SnO2, dopants, Al2O3, TiO2
Como citar
Boletin de La Sociedad Espanola de Ceramica Y Vidrio. Madrid: Soc Espanola Ceramica Vidrio, v. 47, n. 1, p. 24-28, 2008.