Erbium-activated HfO2-based waveguides for photonics
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70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.
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Luminescence, Optical materials, Planar waveguides, Silica-hafnia, Sol-gel, dip-coating, erbium, Annealing, Birefringence, Densification, Erbium, Hafnium compounds, Laser beams, Microstructure, Morphology, Photoluminescence, Photons, Refractive index, Silica, Sol-gels, Dip-coatings, Emission bands, Optical waveguides
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Proceedings of SPIE - The International Society for Optical Engineering, v. 4829 I, p. 89-90.
