Piezoresponse force microscopy characterization of rare-earth doped BiFeO3 thin films grown by the soft chemical method

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2013-04-01

Autores

Foschini, C. R. [UNESP]
Ramirez, M. A. [UNESP]
Simões, S. R. [UNESP]
Varela, José Arana [UNESP]
Longo, Elson [UNESP]
Simões, A. Z. [UNESP]

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Resumo

The multiferroic behavior with ion modification using rare-earth cations on crystal structures, along with the insulating properties of BiFeO3 (BFO) thin films was investigated using piezoresponse force microscopy. Rare-earth-substituted BFO films with chemical compositions of (Bi 1.00-xRExFe1.00O3 (x=0; 0.15), RE=La and Nd were fabricated on Pt (111)/Ti/SiO2/Si substrates using a chemical solution deposition technique. A crystalline phase of tetragonal BFO was obtained by heat treatment in ambient atmosphere at 500 °C for 2 h. Ion modification using La3+ and Nd3+ cations lowered the leakage current density of the BFO films at room temperature from approximately 10-6 down to 10-8 A/cm2. The observed improved magnetism of the Nd3+ substituted BFO thin films can be related to the plate-like morphology in a nanometer scale. We observed that various types of domain behavior such as 71° and 180° domain switching, and pinned domain formation occurred. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. © 2012 Elsevier Ltd and Techna Group S.r.l.

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A. Films, B. Interfaces, C. Dielectric properties, C. Ferroelectric properties, Ambient atmosphere, BFO films, Chemical compositions, Chemical solution deposition techniques, Crystalline phase, Domain behavior, Domain formation, Domain switchings, Ferroelectric property, Insulating properties, Longitudinal direction, Magnetoelectric coefficients, Multiferroic behavior, Nano-meter scale, Piezoresponse force microscopy, Plate-like morphology, Pt(111), Rare earth cations, Rare earth doped, Room temperature, Soft chemical method, Bismuth, Bismuth compounds, Dielectric properties, Ferroelectric films, Interfaces (materials), Neodymium, Platinum, Positive ions, Thin films, Lanthanum

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Ceramics International, v. 39, n. 3, p. 2185-2195, 2013.