Publicação: Strain- and electric field-induced band gap modulation in nitride nanomembranes
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The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.
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Bandgap modulation, Bulk counterpart, Electronic mobility, Field-induced, Field-induced modulation, Group III nitrides, Semiconductor-metal transition, Technological applications, Aluminum nitride, Density functional theory, Electric fields, Gallium nitride, Modulation, Nanostructures, Energy gap
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Inglês
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Journal of Physics Condensed Matter, v. 25, n. 19, 2013.
