Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
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Data
2011-10-13
Autores
Ramirez, M. A. [UNESP]
Simões, Alexandre Zirpoli [UNESP]
Felix, A. A. [UNESP]
Tararam, R. [UNESP]
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
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ISSN da Revista
Título de Volume
Editor
Elsevier B.V. Sa
Resumo
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared as a function of the annealing temperature. The crystalline structure and the surface morphology of the films were markedly affected by the annealing temperature and excess calcium. The films show frequency-independent dielectric properties at room temperature which is similar to those properties obtained in single-crystal or epitaxial thin films. The room temperature dielectric constant of the 570-nm-thick CCTO thin films annealed at 600 degrees C at 10 kHz was found to be 124. The best non-ohmic behavior (alpha = 12.6) presented by the film with excess calcium annealed at 500 degrees C. Resistive hysteresis on the I-V curves was observed which indicates these films can be used in resistance random access memory (ReRAM). Published by Elsevier B.V.
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Palavras-chave
CCTO, Thin films, Electrical properties, Dielectric properties
Como citar
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 41, p. 9930-9933, 2011.