Estudo das propriedades elétricas e morfológicas de transistores de filme fino de óxido de zinco processados por solução
Carregando...
Arquivos
Data
2023-04-20
Autores
Título da Revista
ISSN da Revista
Título de Volume
Editor
Universidade Estadual Paulista (Unesp)
Resumo
Esta tese de doutorado é o resultado de alguns trabalhos realizados em estudos de dispositivos eletrônicos à base de óxidos metálicos processados por solução. O primeiro trabalho apresenta um estudo comparativo de como o método de deposição (spray-pirólise e spin-coating) da camada ativa de transistores de filme fino (TFT) afeta as propriedades físicas e o desempenho dos dispositivos. As propriedades dos filmes foram analisadas através de técnicas de espectroscopia de fotoelétrons de raios X (XPS), análise termogravimétrica (TG), microscopia eletrônica de varredura (MEV), difração de raio-x (DRX), espectroscopia UV-Vis e Elipsometria, enquanto as propriedades elétricas foram analisadas através das curvas características de um TFT, analisando a mobilidade dos portadores de carga, tensão limiar e da resistência elétrica dos filmes. O segundo trabalho apresentado nessa tese analisa os efeitos de defeitos intrínsecos na interface entre o semicondutor/isolante em TFT nas propriedades elétricas dos dispositivos através da variação da espessura da camada dielétrica (100, 200 e 300 nm) e da temperatura (80 – 350k). A influência de parâmetros como a estrutura e temperatura permitiram uma análise mais detalhada do transporte de carga de dispositivos TFT, fornecendo, dessa forma, um maior conhecimento das propriedades físicas dos materiais estudados.
This doctoral thesis results from some work carried out in the study of electronic devices based on metallic oxides processed by solution. The first part of the work presents a comparative study of how the deposition method (spray-pyrolysis and spincoating) of the active layer of thin film transistors (TFT) affects both the physical properties and the performance of the devices. The properties of the films were analyzed using Xray photoelectron spectroscopy (XPS), thermogravimetric analysis (TG), scanning electron microscopy (SEM), x-ray diffraction (XRD), UV-Vis spectroscopy, and ellipsometry, while the electrical properties were analyzed through the characteristic curves of a TFT, analyzing the mobility of charge carriers, threshold voltage and electrical resistance of the films. The second work presented in this thesis analyzes the effects of intrinsic defects at the interface between the semiconductor/insulator in TFT on the electrical properties of the devices by varying the thickness of the dielectric layer (100, 200 and 300 nm) and temperature (80 – 350k). The influence structure and temperature allowed a more detailed analysis of the charge transport of TFT devices, providing greater knowledge of the physical properties of the studied materials.
This doctoral thesis results from some work carried out in the study of electronic devices based on metallic oxides processed by solution. The first part of the work presents a comparative study of how the deposition method (spray-pyrolysis and spincoating) of the active layer of thin film transistors (TFT) affects both the physical properties and the performance of the devices. The properties of the films were analyzed using Xray photoelectron spectroscopy (XPS), thermogravimetric analysis (TG), scanning electron microscopy (SEM), x-ray diffraction (XRD), UV-Vis spectroscopy, and ellipsometry, while the electrical properties were analyzed through the characteristic curves of a TFT, analyzing the mobility of charge carriers, threshold voltage and electrical resistance of the films. The second work presented in this thesis analyzes the effects of intrinsic defects at the interface between the semiconductor/insulator in TFT on the electrical properties of the devices by varying the thickness of the dielectric layer (100, 200 and 300 nm) and temperature (80 – 350k). The influence structure and temperature allowed a more detailed analysis of the charge transport of TFT devices, providing greater knowledge of the physical properties of the studied materials.
Descrição
Palavras-chave
Transistor de ZnO, Spray-pirólise, Spin-coating, Defeitos intrínsecos de interface, Dispositivos eletrônicos, ZnO transistor, Interface intrinsic defects, Electronic devices