Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

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dc.contributor.authorEscote, M. T.
dc.contributor.authorPontes, F. M.
dc.contributor.authorMambrini, G. P.
dc.contributor.authorLeite, E. R.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:27:15Z
dc.date.available2014-05-20T15:27:15Z
dc.date.issued2005-01-01
dc.description.abstractHigh-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, LIEC, CMDMC, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent2341-2345
dc.identifierhttp://dx.doi.org/10.1016/j.jeurceramsoc.2005.03.054
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 25, n. 12, p. 2341-2345, 2005.
dc.identifier.doi10.1016/j.jeurceramsoc.2005.03.054
dc.identifier.issn0955-2219
dc.identifier.urihttp://hdl.handle.net/11449/37278
dc.identifier.wosWOS:000230569300077
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectfilmspt
dc.subjectchemical solution deposition methodpt
dc.subjectferroelectric propertiespt
dc.subjectperovskitespt
dc.subjectBaTiO3 and titanatespt
dc.titleImprovement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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