Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

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dc.contributor.authorZanetti, S. M.
dc.contributor.authorAraujo, E. B.
dc.contributor.authorLeite, E. R.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:22:23Z
dc.date.available2014-05-20T15:22:23Z
dc.date.issued1999-07-01
dc.description.abstractSrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationUFSCar, Dept Quim, BR-13560905 Sao Carlos, SP, Brazil
dc.description.affiliationUFSCar, Dept Fis, BR-13560905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent33-38
dc.identifierhttp://dx.doi.org/10.1016/S0167-577X(99)00045-2
dc.identifier.citationMaterials Letters. Amsterdam: Elsevier B.V., v. 40, n. 1, p. 33-38, 1999.
dc.identifier.doi10.1016/S0167-577X(99)00045-2
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/11449/33383
dc.identifier.wosWOS:000081494600008
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Letters
dc.relation.ispartofjcr2.687
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectferroelectricpt
dc.subjectSrBi2Ta2O9pt
dc.subjectbismuth layerpt
dc.subjectthin filmspt
dc.subjectPt/Ti/SiO2/Si substratespt
dc.subjectperovskite phasept
dc.titleStructural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperatureen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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