Raman scattering study of zincblende InxGa1-xN alloys

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dc.contributor.authorTabata, A. [UNESP]
dc.contributor.authorSilveira, E.
dc.contributor.authorLeite, J. R.
dc.contributor.authorTrentin, R.
dc.contributor.authorScolfaro, L. M. R.
dc.contributor.authorLemos, V.
dc.contributor.authorFrey, T.
dc.contributor.authorAs, D. J.
dc.contributor.authorSchikora, D.
dc.contributor.authorLischka, K.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionFB6 Physik
dc.date.accessioned2014-05-27T11:19:47Z
dc.date.available2014-05-27T11:19:47Z
dc.date.issued1999-11-01
dc.description.abstractWe report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.en
dc.description.affiliationFaculdade de Ciências de Bauru Universidade Estadual Paulista, CP 473, 17033-360 Bauru (SP)
dc.description.affiliationInstituto de Física Universidade de São Paulo, CP 66318, 05315-970 São Paulo (SP)
dc.description.affiliationInst. de Física Gleb Wataghin Universidade Estadual de Campinas, 13083-970 Campinas (SP)
dc.description.affiliationUniversität/GH Paderborn FB6 Physik, Warburger Str. 100, D-33098 Paderborn
dc.description.affiliationUnespFaculdade de Ciências de Bauru Universidade Estadual Paulista, CP 473, 17033-360 Bauru (SP)
dc.format.extent769-774
dc.identifierhttp://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<769::AID-PSSB769>3.0.CO;2-L
dc.identifier.citationPhysica Status Solidi (B) Basic Research, v. 216, n. 1, p. 769-774, 1999.
dc.identifier.doi10.1002/(SICI)1521-3951(199911)216:1<769::AID-PSSB769>3.0.CO;2-L
dc.identifier.issn0370-1972
dc.identifier.scopus2-s2.0-0033243031
dc.identifier.urihttp://hdl.handle.net/11449/65869
dc.identifier.wosWOS:000084193900146
dc.language.isoeng
dc.relation.ispartofPhysica Status Solidi B: Basic Research
dc.relation.ispartofjcr1.729
dc.relation.ispartofsjr0,602
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.titleRaman scattering study of zincblende InxGa1-xN alloysen
dc.typeArtigo
dcterms.licensehttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
unesp.author.lattes9354064620643611[1]
unesp.author.orcid0000-0002-9389-0238[1]

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