Preparation, microstructural and electrical characterization of SrTiO3 thin films prepared by chemical route

dc.contributor.authorPontes, F. M.
dc.contributor.authorLeite, E. R.
dc.contributor.authorLee, EJH
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:42Z
dc.date.available2014-05-20T15:28:42Z
dc.date.issued2001-03-01
dc.description.abstractPolycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different temperatures by the polymeric precursor method on platinum-coated silicon substrate. Crystalline films with uniform composition and thickness were prepared by spin-coating and the post-deposition heat treatment was carried out at different temperatures. The film showed good structural, dielectric, and insulating properties, Scanning electron microscopy (SEM) micrographs showed no occurrence of interdiffusion between the bottom electrode (platinum) and the film during post-annealing, indicating a stable interface between the SrTiO3 and the bottom electrode. The dielectric constant and dissipation factor at a frequency of 100 kHz were 250 and 0.01, respectively, for a 360 nm thick film annealed at 600 degreesC. The capacitance versus applied voltage characteristics showed that the capacitance was almost independent of the applied voltage. The I-V characteristics were ohmic in low fields and a Schottky emission and/or Poole-Frenkel emission were postulated in high fields. Room temperature leakage current density was found to be in the order of 10(-7) A/cm(2) for a 360 nm thick film in an applied electric field of about 100 kV/cm. The charge storage density of 36 fC/mum(2) was obtained in an applied electric field of about 100 kV/cm. (C) 2001 Published by Elsevier B.V. Ltd. All rights reserved.en
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13560905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent419-426
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(00)00194-1
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 21, n. 3, p. 419-426, 2001.
dc.identifier.doi10.1016/S0955-2219(00)00194-1
dc.identifier.issn0955-2219
dc.identifier.urihttp://hdl.handle.net/11449/38454
dc.identifier.wosWOS:000167402200020
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdielectric propertiespt
dc.subjectfilmspt
dc.subjectperovskitespt
dc.subjectspin coatingpt
dc.subjectSrTiO3pt
dc.titlePreparation, microstructural and electrical characterization of SrTiO3 thin films prepared by chemical routeen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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