Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

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dc.contributor.authorGuimaraes, Sonia
dc.contributor.authorde Lima, Joaquim Tavares [UNESP]
dc.contributor.authorPetoilho, Jose Carlos
dc.contributor.authorde Lucena, Emerson Ferreira [UNESP]
dc.contributor.authorHwang, Miriam Kasumi
dc.contributor.authorCampos, Elson [UNESP]
dc.contributor.institutionIAE
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:28:12Z
dc.date.available2014-05-20T13:28:12Z
dc.date.issued2008-04-01
dc.description.abstractWe are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.en
dc.description.affiliationIAE, AMR, Div Mat, Comando Geral Tecnol Aerospacial, BR-12228904 Sao Jos Campos, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, FEG, Dept Mat & Tecnol, Guaratingueta, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, FEG, Dept Mat & Tecnol, Guaratingueta, Brazil
dc.format.extent1657-1663
dc.identifierhttp://dx.doi.org/10.1016/j.jcrysgro.2007.11.176
dc.identifier.citationJournal of Crystal Growth. Amsterdam: Elsevier B.V., v. 310, n. 7-9, p. 1657-1663, 2008.
dc.identifier.doi10.1016/j.jcrysgro.2007.11.176
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11449/9364
dc.identifier.wosWOS:000255843200064
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Crystal Growth
dc.relation.ispartofjcr1.742
dc.relation.ispartofsjr0,592
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectatomic force microscopyen
dc.subjectoptical microscopyen
dc.subjectX-ray diffractionen
dc.subjectvapor phase epitaxyen
dc.subjectInSben
dc.subjectTeen
dc.subjectCd compoundsen
dc.subjecthomojunctions semiconductor infrared devicesen
dc.titleModified LPE system used to diffuse Cd to obtain InSb infrared detectorsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt

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