Fabrication and structural characterization of bismuth niobate thin films grown by chemical solution deposition

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dc.contributor.authorGoncalves, L. F. [UNESP]
dc.contributor.authorCortes, J. A. [UNESP]
dc.contributor.authorRanieri, M. G. A. [UNESP]
dc.contributor.authorDestro, F. B. [UNESP]
dc.contributor.authorRamirez, M. A. [UNESP]
dc.contributor.authorSimoes, A. Z. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2015-10-22T07:24:15Z
dc.date.available2015-10-22T07:24:15Z
dc.date.issued2015-02-01
dc.description.abstractBi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) substrates at room temperature from the polymeric precursor method. X-ray powder diffraction and transmission electron microscopy were used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. The 200 nm thick BNO films exhibit crystalline structure, a dielectric constant of 170, capacitance density of 200 nF/cm(2), dielectric loss of 0.4 % at 1 MHz, and a leakage current density of approximately 1 x 10(-7) A/cm(2) at 5 V. They show breakdown strength of about 0.25 MV/cm. The leakage mechanism of BNO film in high field conduction is well explained by the Schottky and Poole-Frenkel emission models. The 200 nm thick BNO film is suitable for embedded decoupling capacitor applications directly on a printed circuit board.en
dc.description.affiliationUniv Estadual Paulista Unesp, Faculdade de Engenharia de Guaratinguetá (FEG), BR-12516410 São Paulo, Brazil
dc.description.affiliationUnespUniv Estadual Paulista Unesp, Faculdade de Engenharia de Guaratinguetá (FEG), BR-12516410 São Paulo, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent1142-1150
dc.identifierhttp://link.springer.com/article/10.1007%2Fs10854-014-2518-6
dc.identifier.citationJournal Of Materials Science-materials In Electronics. Dordrecht: Springer, v. 26, n. 2, p. 1142-1150, 2015.
dc.identifier.doi10.1007/s10854-014-2518-6
dc.identifier.issn0957-4522
dc.identifier.lattes3573363486614904
dc.identifier.urihttp://hdl.handle.net/11449/129867
dc.identifier.wosWOS:000349439500072
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-materials In Electronics
dc.relation.ispartofjcr2.324
dc.relation.ispartofsjr0,503
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleFabrication and structural characterization of bismuth niobate thin films grown by chemical solution depositionen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
unesp.author.lattes3573363486614904[6]
unesp.author.orcid0000-0003-2535-2187[6]
unesp.author.orcid0000-0003-2353-8439[4]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt

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