Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films

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dc.contributor.authorGiraldi, T. R.
dc.contributor.authorEscote, M. T.
dc.contributor.authorBernardi, MIB
dc.contributor.authorBouquet, V
dc.contributor.authorLeite, E. R.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Rennes 1
dc.date.accessioned2014-05-20T15:29:51Z
dc.date.available2014-05-20T15:29:51Z
dc.date.issued2004-07-01
dc.description.abstractThis work reports the preparation and characterization of (SnO2) thin films doped with 7 mol% Sb2O3. The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 x 10(-3) Omega cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.en
dc.description.affiliationUFSCar, CMDM, LIEC, DQ, Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, CMDM, LIEC, IQ, Araraquara, SP, Brazil
dc.description.affiliationUniv Rennes 1, Inst Chim Rennes, LCSIM, F-35042 Rennes, France
dc.description.affiliationUnespUNESP, CMDM, LIEC, IQ, Araraquara, SP, Brazil
dc.format.extent159-165
dc.identifierhttp://dx.doi.org/10.1007/s10832-004-5093-z
dc.identifier.citationJournal of Electroceramics. Dordrecht: Kluwer Academic Publ, v. 13, n. 1-3, p. 159-165, 2004.
dc.identifier.doi10.1007/s10832-004-5093-z
dc.identifier.issn1385-3449
dc.identifier.urihttp://hdl.handle.net/11449/39337
dc.identifier.wosWOS:000226236100026
dc.language.isoeng
dc.publisherKluwer Academic Publ
dc.relation.ispartofJournal of Electroceramics
dc.relation.ispartofjcr1.238
dc.relation.ispartofsjr0,427
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectthin filmpt
dc.subjecttin oxidept
dc.subjectantimonypt
dc.titleEffect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights
dcterms.rightsHolderKluwer Academic Publ
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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