Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films
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Data
2009-01-01
Autores
Fraga, M. A.
Massi, M.
Oliveira, I. C.
Cruz, Nilson Cristino da [UNESP]
Santos Filho, S. G. dos
Título da Revista
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Editor
Trans Tech Publications Ltd
Resumo
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.
Descrição
Palavras-chave
Silicon carbon nitride, Thermal annealing, Resistivity, Elastic modulus, Hardness
Como citar
Materials Science Forum, v. 615 617, p. 327-330.