Adsorption of silanes bearing nitrogenated Lewis bases on SiO 2/Si (100) model surfaces

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dc.contributor.authorAndresa, Juliana Salvador
dc.contributor.authorReis, Rafael Machado
dc.contributor.authorGonzalez, Eduardo Perez [UNESP]
dc.contributor.authorSantos, Leonardo Silva
dc.contributor.authorEberlin, Marcos Nogueira
dc.contributor.authorNascente, Pedro Augusto de Paula
dc.contributor.authorTanimoto, Sonia Tomie
dc.contributor.authorMachado, Sergio Antonio Spinola
dc.contributor.authorRodrigues-Filho, Ubirajara P.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:21:20Z
dc.date.available2014-05-27T11:21:20Z
dc.date.issued2005-06-01
dc.description.abstractThe present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.en
dc.description.affiliationUniversidade de São Paulo Inst. de Quím. de S. Carlos, P.O. Box 780, 13564-970 São Carlos
dc.description.affiliationUniversidade Estadual de Campinas Instituto de Química Lab. Thomson Espectrometria Massas, 13084-971 Campinas, SP
dc.description.affiliationUniv. Federal de São Carlos Depto. de Engenharia de Materiais Ctro. Caracterizacao D., 13565-970 São Carlos
dc.description.affiliationDepto. de Fis., Quim. e Biol. Faculdade de Ciê. e Tecnologia Univ. Estadual Paulista Julio M., Presidente Prudente, SP
dc.format.extent303-309
dc.identifierhttp://dx.doi.org/10.1016/j.jcis.2005.01.019
dc.identifier.citationJournal of Colloid and Interface Science, v. 286, n. 1, p. 303-309, 2005.
dc.identifier.doi10.1016/j.jcis.2005.01.019
dc.identifier.issn0021-9797
dc.identifier.lattes6796683603864969
dc.identifier.scopus2-s2.0-17744371164
dc.identifier.urihttp://hdl.handle.net/11449/68247
dc.language.isoeng
dc.relation.ispartofJournal of Colloid and Interface Science
dc.relation.ispartofjcr5.091
dc.relation.ispartofsjr1,221
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subject3-Imidazolylpropyltrimethoxysilane
dc.subject4-(N-Propyltriethoxysilane-imino) pyridine
dc.subjectAFM
dc.subjectMALDI-TOF MS
dc.subjectSelf-assembled thin films
dc.subjectSilicon dioxide
dc.subjectSilicon wafer
dc.subjectXPS
dc.subjectAerosols
dc.subjectAgglomeration
dc.subjectGlass
dc.subjectMathematical models
dc.subjectMonolayers
dc.subjectOxidation
dc.subjectQuartz
dc.subjectSelf assembly
dc.subjectSilanes
dc.subjectSilica
dc.subjectSurface chemistry
dc.subjectThin films
dc.subjectThin layer chromatography
dc.subjectModel systems
dc.subjectNitrogenated Lewis bases
dc.subjectOxidized silicon wafers
dc.subjectAdsorption
dc.subjectheterocyclic compound
dc.subjecthistamine
dc.subjecthistidine
dc.subjectLewis base
dc.subjectsilane derivative
dc.subjectsilicon dioxide
dc.subjecttransition element
dc.subjectadsorption
dc.subjectaffinity chromatography
dc.subjectatomic force microscopy
dc.subjectchemical model
dc.subjectchemical reaction
dc.subjectfilm
dc.subjectmatrix assisted laser desorption ionization time of flight mass spectrometry
dc.subjectmetal extraction
dc.subjectnitration
dc.subjectoxidation kinetics
dc.subjectphase transition
dc.subjectpriority journal
dc.subjectreaction analysis
dc.subjectthin layer chromatography
dc.subjectX ray powder diffraction
dc.titleAdsorption of silanes bearing nitrogenated Lewis bases on SiO 2/Si (100) model surfacesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
unesp.author.lattes6796683603864969
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências e Tecnologia, Presidente Prudentept

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