Disclosing the nature of vacancy defects in α-Ag2WO4

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dc.contributor.authorAssis, M.
dc.contributor.authorCastro, M. S.
dc.contributor.authorAldao, C. M.
dc.contributor.authorBuono, C.
dc.contributor.authorOrtega, P. P. [UNESP]
dc.contributor.authorTeodoro, M. D.
dc.contributor.authorAndrés, J.
dc.contributor.authorGouveia, A. F.
dc.contributor.authorSimões, A. Z. [UNESP]
dc.contributor.authorLongo, E.
dc.contributor.authorMacchi, C. E.
dc.contributor.authorSomoza, A.
dc.contributor.authorMoura, F.
dc.contributor.authorPonce, M. A.
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversity Jaume I (UJI)
dc.contributor.institutionUniversity of Mar del Plata and National Research Council (CONICET)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionInstitute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET)
dc.contributor.institutionFederal University of Itajubá
dc.date.accessioned2023-07-29T16:10:24Z
dc.date.available2023-07-29T16:10:24Z
dc.date.issued2023-08-01
dc.description.abstractDefects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of defects and the conduction mechanism in α-Ag2WO4. To this aim, a detailed analysis of the results of XRD with Rietveld refinements, FE-SEM images, and measurements of different spectroscopies (impedance, positron annihilation lifetime, and photoluminescence) are carried out on α-Ag2WO4 samples synthesized by a simple co-precipitation method. Two types of vacancy defects: cationic O-vacancies, and anionic Ag or Ag–O vacancy complexes are elucidated with a Schottky p-type potential barrier. The results indicate that the Ag vacancies remain constant during thermal treatment, while an opposite effect is found for the oxygen vacancies. This behavior governs the multifunctional properties of α-Ag2WO4 semiconductors via a tunneling plus thermionic conduction mechanism.en
dc.description.affiliationCDMF Federal University of São Carlos (UFSCar)
dc.description.affiliationDepartment of Physical and Analytical Chemistry University Jaume I (UJI), Castellón
dc.description.affiliationInstitute of Materials Science and Technology (INTEMA) University of Mar del Plata and National Research Council (CONICET), Av. Colón 10850
dc.description.affiliationInstitute of Scientific and Technological Research in Electronics (ICYTE) University of Mar del Plata and National Research Council (CONICET), Juan B. Justo 4302
dc.description.affiliationSchool of Engineering São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas
dc.description.affiliationDepartment of Physics Federal University of São Carlos (UFSCar)
dc.description.affiliationInstitute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET), Pinto 399
dc.description.affiliationAdvanced Materials Interdisciplinary Laboratory Federal University of Itajubá, Unifei – Campus Itabira, MG
dc.description.affiliationUnespSchool of Engineering São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas
dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2023.112252
dc.identifier.citationMaterials Research Bulletin, v. 164.
dc.identifier.doi10.1016/j.materresbull.2023.112252
dc.identifier.issn0025-5408
dc.identifier.scopus2-s2.0-85151805054
dc.identifier.urihttp://hdl.handle.net/11449/249833
dc.language.isoeng
dc.relation.ispartofMaterials Research Bulletin
dc.sourceScopus
dc.subjectDefects
dc.subjectElectronic properties
dc.subjectα-Ag2WO4
dc.titleDisclosing the nature of vacancy defects in α-Ag2WO4en
dc.typeArtigo

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Artigos - Materiais e Tecnologia - FEG