Logotipo do repositório
 

Publicação:
Electro-optical properties of Er-doped SnO2 thin films

dc.contributor.authorMorais, E. A.
dc.contributor.authorScalvi, LVA
dc.contributor.authorGeraldo, V
dc.contributor.authorScalvi, RMF
dc.contributor.authorRibeiro, SJL
dc.contributor.authorSantilli, C. V.
dc.contributor.authorPulcinelli, S. H.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-20T15:22:00Z
dc.date.available2014-05-20T15:22:00Z
dc.date.issued2004-01-01
dc.description.abstractPhotoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUNESP, Dept Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUSP, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Quim Araraquara, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Dept Fis FC, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim Araraquara, BR-14801907 Araraquara, SP, Brazil
dc.format.extent1857-1860
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(03)00515-6
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 24, n. 6, p. 1857-1860, 2004.
dc.identifier.doi10.1016/S0955-2219(03)00515-6
dc.identifier.issn0955-2219
dc.identifier.lattes7730719476451232
dc.identifier.lattes0492600439402115
dc.identifier.lattes5584298681870865
dc.identifier.orcid0000-0002-8356-8093
dc.identifier.urihttp://hdl.handle.net/11449/33074
dc.identifier.wosWOS:000189247800191
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjecterbium dopingpt
dc.subjectoxygen adsorptionpt
dc.subjectphotoconductivitypt
dc.subjecttin dioxide filmspt
dc.titleElectro-optical properties of Er-doped SnO2 thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes7730719476451232
unesp.author.lattes0492600439402115
unesp.author.lattes5584298681870865[6]
unesp.author.orcid0000-0002-8356-8093[6]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

Arquivos

Licença do Pacote

Agora exibindo 1 - 1 de 1
Carregando...
Imagem de Miniatura
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição: