Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method
Loading...
Files
External sources
External sources
Date
Advisor
Coadvisor
Graduate program
Undergraduate course
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V. Sa
Type
Article
Access right
Acesso restrito
Files
External sources
External sources
Abstract
This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO(2)/SiO(2)/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 degrees C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe(3+) valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance-voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics. (C) 2009 Elsevier B.V. All rights reserved.
Description
Keywords
Ferroelectrics, Thin films, Chemical synthesis, Piezoelectricity
Language
English
Citation
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 493, n. 1-2, p. 158-162, 2010.
