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Metal oxide ion-gated transistors: A perspective on in operando characterizations and emerging Li-ion-based applications

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dc.contributor.authorda Silva Neres, Lariel Chagas [UNESP]
dc.contributor.authorCamargo, Luan Pereira
dc.contributor.authorAzari, Ramin Karimi
dc.contributor.authorGarza, José Ramón Herrera
dc.contributor.authorSoavi, Francesca
dc.contributor.authorBarbosa, Martin Schwellberger
dc.contributor.authorSantato, Clara
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionPolytechnique Montreal
dc.contributor.institutionUniversidade Estadual de Londrina (UEL)
dc.contributor.institutionAlma Mater Studiorum Universitá di Bologna
dc.contributor.institutionFederal University of Goias (UFG)
dc.date.accessioned2025-04-29T18:05:58Z
dc.date.issued2023-10-01
dc.description.abstractIn this Prospective, we discuss how ionic media interfaced to metal oxide (MO) semiconducting thin films can modulate their electronic conductivity. From in situ diagnosis tools to monitor the state-of-health of Li-ion batteries, to synaptic transistors where ion diffusive dynamics governs short-term and long-term plasticity, technologies based on ionic medium/MO interfaces are emerging, strongly benefitting from advanced nanoscale resolved scanning probe techniques and computational chemistry. Graphical abstract: [Figure not available: see fulltext.]en
dc.description.affiliationInstitute of Chemistry State University of São Paulo (UNESP), SP
dc.description.affiliationEngineering Physics Department Polytechnique Montreal
dc.description.affiliationChemistry Department CCE State University of Londrina (UEL), PR
dc.description.affiliationDepartment of Chemistry “Giacomo Ciamician” Alma Mater Studiorum Universitá di Bologna, Via Selmi 2
dc.description.affiliationInstitute of Chemistry Federal University of Goias (UFG), Av. Esperança, s/n—Chácaras de Recreio Samambaia, GO
dc.description.affiliationUnespInstitute of Chemistry State University of São Paulo (UNESP), SP
dc.format.extent695-703
dc.identifierhttp://dx.doi.org/10.1557/s43579-023-00437-z
dc.identifier.citationMRS Communications, v. 13, n. 5, p. 695-703, 2023.
dc.identifier.doi10.1557/s43579-023-00437-z
dc.identifier.issn2159-6867
dc.identifier.issn2159-6859
dc.identifier.scopus2-s2.0-85169168847
dc.identifier.urihttps://hdl.handle.net/11449/297241
dc.language.isoeng
dc.relation.ispartofMRS Communications
dc.sourceScopus
dc.subjectComputation/computing
dc.subjectDevices
dc.subjectElectrical properties
dc.subjectEnergy storage
dc.subjectNeuromorphic
dc.subjectOperando
dc.titleMetal oxide ion-gated transistors: A perspective on in operando characterizations and emerging Li-ion-based applicationsen
dc.typeArtigopt
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.orcid0000-0003-0155-1245[1]
unesp.author.orcid0000-0003-3857-7270[2]
unesp.author.orcid0000-0002-8498-7476[3]
unesp.author.orcid0000-0002-6971-2925[4]
unesp.author.orcid0000-0003-3415-6938[5]
unesp.author.orcid0000-0003-1255-357X[6]
unesp.author.orcid0000-0001-6731-0538[7]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt

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Araraquara - IQAR - Instituto de Química