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Impact of process and device dimensions on Bio-TFET Sensitivity

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dc.contributor.authorMacambira, C. N.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-06T15:37:24Z
dc.date.available2019-10-06T15:37:24Z
dc.date.issued2019-02-11
dc.description.abstractThis paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials localized over the drain to gate and gate to source underlap regions. The impact of silicon thickness (tSi), gate oxide (tox), underlap length at the source (LUS) and at the drain region (LUD) were studied. The best sensitivity for Bio-TFET biosensor is obtained for the source underlap LUS of 25 nm, channel silicon thickness of 5 nm and gate oxide thickness of 3 nm. The energy band diagram and the band-to-band tunneling generation rate were used to explain the results.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1109/S3S.2018.8640152
dc.identifier.citation2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018.
dc.identifier.doi10.1109/S3S.2018.8640152
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85063155012
dc.identifier.urihttp://hdl.handle.net/11449/187479
dc.language.isoeng
dc.relation.ispartof2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectBio-TFET
dc.subjectBiosensor
dc.subjectTFET
dc.subjectTunnel-FET
dc.titleImpact of process and device dimensions on Bio-TFET Sensitivityen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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