Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
Loading...
Files
External sources
External sources
Date
Advisor
Coadvisor
Graduate program
Undergraduate course
Journal Title
Journal ISSN
Volume Title
Publisher
Type
Work presented at event
Access right
Acesso aberto
Files
External sources
External sources
Abstract
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.
Description
Keywords
self-aligned, SOI, Spacer, Ultra Thin Body and Buried Oxide, underlap
Language
English
Citation
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
