Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
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Abstract
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.
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2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, v. 2018-March, p. 1-3.
