Publicação: Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
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Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Tipo
Trabalho apresentado em evento
Direito de acesso
Acesso aberto
Resumo
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
Descrição
Palavras-chave
random telegraph signal, time lag plot, ReRAMs, low frequency noise, interface traps, UTBB SOI, oxide traps
Idioma
Inglês
Como citar
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
