Publicação: Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors
dc.contributor.author | Lee, EJH | |
dc.contributor.author | Pontes, F. M. | |
dc.contributor.author | Leite, E. R. | |
dc.contributor.author | Longo, Elson [UNESP] | |
dc.contributor.author | Magnani, R. | |
dc.contributor.author | Pizani, P. S. | |
dc.contributor.author | Varela, José Arana [UNESP] | |
dc.contributor.institution | Universidade Federal de São Carlos (UFSCar) | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:28:28Z | |
dc.date.available | 2014-05-20T15:28:28Z | |
dc.date.issued | 2004-04-01 | |
dc.description.abstract | Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved. | en |
dc.description.affiliation | UFSCar, Dept Chem, CMDMC, LIEC, BR-13565905 Sao Carlos, SP, Brazil | |
dc.description.affiliation | UFSCar, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil | |
dc.description.affiliation | UNESP, Inst Chem, Araraquara, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Inst Chem, Araraquara, SP, Brazil | |
dc.format.extent | 1715-1721 | |
dc.identifier | http://dx.doi.org/10.1016/j.matlet.2003.10.047 | |
dc.identifier.citation | Materials Letters. Amsterdam: Elsevier B.V., v. 58, n. 11, p. 1715-1721, 2004. | |
dc.identifier.doi | 10.1016/j.matlet.2003.10.047 | |
dc.identifier.issn | 0167-577X | |
dc.identifier.uri | http://hdl.handle.net/11449/38267 | |
dc.identifier.wos | WOS:000220244900011 | |
dc.language.iso | eng | |
dc.publisher | Elsevier B.V. | |
dc.relation.ispartof | Materials Letters | |
dc.relation.ispartofjcr | 2.687 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | barium titanate | pt |
dc.subject | dielectric properties | pt |
dc.subject | conduction mechanism | pt |
dc.subject | post-annealing | pt |
dc.title | Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors | en |
dc.type | Artigo | |
dcterms.license | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
dcterms.rightsHolder | Elsevier B.V. | |
dspace.entity.type | Publication | |
unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara | pt |
unesp.department | Bioquímica e Tecnologia - IQAR | pt |
unesp.department | Físico-Química - IQAR | pt |
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