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Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

dc.contributor.authorLee, EJH
dc.contributor.authorPontes, F. M.
dc.contributor.authorLeite, E. R.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorMagnani, R.
dc.contributor.authorPizani, P. S.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:28Z
dc.date.available2014-05-20T15:28:28Z
dc.date.issued2004-04-01
dc.description.abstractBarium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved.en
dc.description.affiliationUFSCar, Dept Chem, CMDMC, LIEC, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUFSCar, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Chem, Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, Araraquara, SP, Brazil
dc.format.extent1715-1721
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2003.10.047
dc.identifier.citationMaterials Letters. Amsterdam: Elsevier B.V., v. 58, n. 11, p. 1715-1721, 2004.
dc.identifier.doi10.1016/j.matlet.2003.10.047
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/11449/38267
dc.identifier.wosWOS:000220244900011
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Letters
dc.relation.ispartofjcr2.687
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectbarium titanatept
dc.subjectdielectric propertiespt
dc.subjectconduction mechanismpt
dc.subjectpost-annealingpt
dc.titleEffects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitorsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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