Publicação:
Signal to noise ratio in nanoscale bioFETs

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dc.contributor.authorMori, Carlos Augusto Bergfeld
dc.contributor.authorMartens, Koen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVan Dorpe, Pol
dc.contributor.authorAgopian, Paula Ghedini Der [UNESP]
dc.contributor.authorMartino, João Antonio
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionimec
dc.contributor.institutionKU Leuven
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.date.accessioned2023-03-01T19:57:16Z
dc.date.available2023-03-01T19:57:16Z
dc.date.issued2022-08-01
dc.description.abstractWe experimentally demonstrate the use of electrolytically gated SOI pFinFETs employed as bioFETs for the detection of single-stranded DNA and evaluate their low-frequency noise in the range between 1 Hz and 100 Hz. Both channel length and overdrive voltage dependencies are analyzed, showing the best (i.e., highest) signal to noise ratio for the devices with their gates biased around the threshold voltage, with little to no dependence on the channel length.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationimec
dc.description.affiliationKU Leuven
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1016/j.sse.2022.108358
dc.identifier.citationSolid-State Electronics, v. 194.
dc.identifier.doi10.1016/j.sse.2022.108358
dc.identifier.issn0038-1101
dc.identifier.scopus2-s2.0-85129565421
dc.identifier.urihttp://hdl.handle.net/11449/240006
dc.language.isoeng
dc.relation.ispartofSolid-State Electronics
dc.sourceScopus
dc.subject1/f noise
dc.subjectBioFET
dc.subjectFinFET
dc.subjectISFET
dc.titleSignal to noise ratio in nanoscale bioFETsen
dc.typeArtigo
dspace.entity.typePublication

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