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Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

dc.contributor.authorAntunes, A. C.
dc.contributor.authorAntunes, SRM
dc.contributor.authorPianaro, S. A.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorLeite, E. R.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniv Estadual Ponta Grossa
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:21:20Z
dc.date.available2014-05-20T15:21:20Z
dc.date.issued2001-01-01
dc.description.abstractThe effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.en
dc.description.affiliationUniv Estadual Ponta Grossa, BR-84031510 Ponta Grossa, PR, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent69-74
dc.identifierhttp://dx.doi.org/10.1023/A:1011228914690
dc.identifier.citationJournal of Materials Science-materials In Electronics. Dordrecht: Springer, v. 12, n. 1, p. 69-74, 2001.
dc.identifier.doi10.1023/A:1011228914690
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11449/32493
dc.identifier.wosWOS:000168281700012
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.ispartofjcr2.324
dc.relation.ispartofsjr0,503
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistoren
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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