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The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders

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Elsevier B.V.

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Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.

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zinc gallate, impurities in semiconductors, crystal structure and symmetry, optical properties, doping, ZnO : Ga, ZnGa3O4, Pechini method

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Inglês

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Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 5, p. 1330-1334, 2006.

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