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Publicação:
Characterization of Aluminum Contacts on Cobalt Oxide Films Grown with Different Oxygen Concentrations

dc.contributor.authorAngelico, João C. [UNESP]
dc.contributor.authorNeto, Nilton F. A. [UNESP]
dc.contributor.authorDa Silva, José H. Dias [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Paulista - UNIP
dc.date.accessioned2019-10-06T15:54:59Z
dc.date.available2019-10-06T15:54:59Z
dc.date.issued2019-01-01
dc.description.abstractThe electronic transport in a metal/semiconductor/metal (MSM) structure, consisting of cobalt oxide films with aluminum (Al) contacts, was investigated. The cobalt oxides were grown by direct current (DC) magnetron sputtering using different oxygen gas flow rates. The behavior of the electric conductivity in the 200 K–350 K temperature range, the Schottky barrier heights (∅ B) and specific contact resistances (Rc) were investigated. The analysis shows that small oxygen flow variations produce significant changes in electrical characteristics of the MSM structure.en
dc.description.affiliationUniversidade Estadual Paulista - UNESP
dc.description.affiliationUniversidade Paulista - UNIP
dc.description.affiliationUnespUniversidade Estadual Paulista - UNESP
dc.identifierhttp://dx.doi.org/10.1007/s11664-019-07565-0
dc.identifier.citationJournal of Electronic Materials.
dc.identifier.doi10.1007/s11664-019-07565-0
dc.identifier.issn1543-186X
dc.identifier.issn0361-5235
dc.identifier.scopus2-s2.0-85071468186
dc.identifier.urihttp://hdl.handle.net/11449/188028
dc.language.isoeng
dc.relation.ispartofJournal of Electronic Materials
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectelectrical conductivity
dc.subjectSchottky barrier
dc.subjectthin films
dc.titleCharacterization of Aluminum Contacts on Cobalt Oxide Films Grown with Different Oxygen Concentrationsen
dc.typeArtigo
dspace.entity.typePublication
unesp.author.orcid0000-0002-4826-6436[1]

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