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Electrochemically grafted molecular layers as on-chip energy storage molecular junctions

dc.contributor.authorKaur, Rajwinder
dc.contributor.authorMalik, Ankur
dc.contributor.authorGupta, Ritu
dc.contributor.authorKumari, Kusum
dc.contributor.authorSingh, Saurabh Kumar
dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.authorMondal, Prakash Chandra
dc.contributor.institutionIndian Institute of Technology Kanpur
dc.contributor.institutionIndian Institute of Technology Hyderabad
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.date.accessioned2025-04-29T18:06:06Z
dc.date.issued2025-01-13
dc.description.abstractMolecular junctions (MJs) are celebrated nanoelectronic devices for mimicking conventional electronic functions, including rectifiers, sensors, wires, switches, transistors, negative differential resistance, and memory, following an understanding of charge transport mechanisms. However, capacitive nanoscale molecular junctions are rarely seen. The present work describes electrochemically (E-Chem) grown covalently attached molecular thin films of 10, 14.3, and 18.6 nm thickness using benzimidazole (BENZ) diazonium salts on ITO electrodes on a quartz substrate upon which 50 nm of aluminum (Al) top contact was deposited to fabricate large-scale (area = 500 × 500 μm2) molecular junctions. The capacitance of the molecular junctions decreases with increasing thickness of molecular layers, a behavior attributed to a classical dielectric role in which the geometric capacitance of the device within a uniform dielectric component is expected to decrease with increasing thickness. An electrical dipole moment in BENZ oligomers enhances polarizability; hence, the dielectric constant of the medium leads to an increase in the capacitance of MJs, which reaches a maximum value of ∼53 μF cm−2 for a junction of 10 nm molecular film thickness. In addition to direct-current (DC) electrical measurements, and computational studies, we performed alternating current (AC)-based electrical measurements to understand the frequency response of molecular junctions. Our present study demonstrates that BENZ-based molecular junctions behave as classical organic capacitors and could be a suitable building block for nanoscale on-chip energy storage devices.en
dc.description.affiliationDepartment of Chemistry Indian Institute of Technology Kanpur, Uttar Pradesh
dc.description.affiliationDepartment of Chemistry Indian Institute of Technology Hyderabad, Telangana
dc.description.affiliationDepartment of Engineering Physics and Mathematics Institute of Chemistry Sao Paulo State University (UNESP)
dc.description.affiliationUnespDepartment of Engineering Physics and Mathematics Institute of Chemistry Sao Paulo State University (UNESP)
dc.format.extent3560-3570
dc.identifierhttp://dx.doi.org/10.1039/d4sc04745a
dc.identifier.citationChemical Science, v. 16, n. 8, p. 3560-3570, 2025.
dc.identifier.doi10.1039/d4sc04745a
dc.identifier.issn2041-6539
dc.identifier.issn2041-6520
dc.identifier.scopus2-s2.0-85216388232
dc.identifier.urihttps://hdl.handle.net/11449/297270
dc.language.isoeng
dc.relation.ispartofChemical Science
dc.sourceScopus
dc.titleElectrochemically grafted molecular layers as on-chip energy storage molecular junctionsen
dc.typeArtigopt
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.orcid0000-0001-9488-8036[5]
unesp.author.orcid0000-0003-2827-0208[6]
unesp.author.orcid0000-0002-9415-5147[7]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt

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