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Retention characteristics of lanthanum-doped bismuth titanate films annealed at different furnaces

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dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorAguiar, E. C. [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de Itajubá (UNIFEI)
dc.date.accessioned2014-05-20T15:32:54Z
dc.date.available2014-05-20T15:32:54Z
dc.date.issued2009-05-15
dc.description.abstractLanthanum-doped bismuth titanate thin films (Bi(3.25)La(0.75)Ti(3)O(12) - BLT) were prepared by the polymeric precursor method and crystallized in the microwave and conventional furnaces. The obtained films are polycrystalline in nature and its ferroelectric properties were determined with remanent polarization P(r) and a coercive field E(c) of 3.9 mu C cm(-2) and 70 kVcm(-1) for the film annealed in the microwave furnace and 20 mu Ccm(-2) and 52 kVcm(-1) for the film annealed in conventional furnace, respectively. Better retention characteristics were observed in the films annealed in conventional furnace, indicating that our films can be a promise material for use in the future FeRAMS memories. (C) 2009 Elsevier B.V. All rights reserved.en
dc.description.affiliationUNESP Paulista State Univ, Inst Chem, BR-14800020 Araraquara, SP, Brazil
dc.description.affiliationUNIFEI, BR-35900373 Itabira, MG, Brazil
dc.description.affiliationUnespUNESP Paulista State Univ, Inst Chem, BR-14800020 Araraquara, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent434-438
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2008.12.028
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 115, n. 1, p. 434-438, 2009.
dc.identifier.doi10.1016/j.matchemphys.2008.12.028
dc.identifier.issn0254-0584
dc.identifier.lattes3573363486614904
dc.identifier.urihttp://hdl.handle.net/11449/41679
dc.identifier.wosWOS:000264841900076
dc.language.isoeng
dc.publisherElsevier B.V. Sa
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.ispartofjcr2.210
dc.relation.ispartofsjr0,615
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectThin filmsen
dc.subjectAnnealingen
dc.subjectAtomic force microscopyen
dc.subjectFerroelectricityen
dc.titleRetention characteristics of lanthanum-doped bismuth titanate films annealed at different furnacesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V. Sa
dspace.entity.typePublication
unesp.author.lattes3573363486614904
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentMateriais e Tecnologia - FEGpt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Guaratinguetá - FEG - Faculdade de Engenharia e Ciências
Araraquara - IQAR - Instituto de Química