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Random telegraph signal noise in advanced high performance and memory devices

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dc.contributor.authorClaeys, C.
dc.contributor.authorDe Andrade, M. G.C. [UNESP]
dc.contributor.authorChai, Z.
dc.contributor.authorFang, W.
dc.contributor.authorGovoreanu, B.
dc.contributor.authorKaczer, B.
dc.contributor.authorZhang, W.
dc.contributor.authorSimoen, E.
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionLiverpool John Moores University
dc.contributor.institutionMicrosystem and Terahertz Research Center
dc.contributor.institutionGhent University
dc.date.accessioned2018-12-11T16:45:12Z
dc.date.available2018-12-11T16:45:12Z
dc.date.issued2016-11-02
dc.description.abstractRandom Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.en
dc.description.affiliationImec
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUNESP - Univ Estadual Paulista Automation and Integrated Systems
dc.description.affiliationE.E Dept. Liverpool John Moores University
dc.description.affiliationMicrosystem and Terahertz Research Center
dc.description.affiliationDept. Solid-State Physics Ghent University
dc.description.affiliationUnespUNESP - Univ Estadual Paulista Automation and Integrated Systems
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2016.7731315
dc.identifier.citationSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
dc.identifier.dimensionspub.1095682383
dc.identifier.doi10.1109/SBMicro.2016.7731315
dc.identifier.isbn978-1-5090-2788-0
dc.identifier.orcid0000-0003-3446-7138
dc.identifier.orcid0000-0002-5944-4496
dc.identifier.orcid0000-0003-4600-7382
dc.identifier.orcid0000-0002-6634-4709
dc.identifier.orcid0000-0001-7210-2979
dc.identifier.orcid0000-0002-1484-4007
dc.identifier.scopus2-s2.0-85007286667
dc.identifier.urihttp://hdl.handle.net/11449/169280
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rights.accessRightsAcesso abertopt
dc.sourceScopus
dc.sourceDimensions
dc.subjectinterface traps
dc.subjectlow frequency noise
dc.subjectoxide traps
dc.subjectrandom telegraph signal
dc.subjectReRAMs
dc.subjecttime lag plot
dc.subjectUTBB SOI
dc.titleRandom telegraph signal noise in advanced high performance and memory devicesen
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication

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