On the assessment of electrically active defects in high-mobility materials and devices
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Coadvisor
Graduate program
Undergraduate course
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Volume Title
Publisher
Ieee
Type
Work presented at event
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Acesso aberto
Abstract
A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
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Language
English
Citation
2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.
