Publication: Experimental comparison between relaxed and strained Ge pFinFETs
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Coadvisor
Graduate program
Undergraduate course
Journal Title
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Volume Title
Publisher
Ieee
Type
Work presented at event
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Acesso aberto
Abstract
The experimental comparison between relaxed and strained Ge pFinFETs operating at room temperature is discussed. Although, the strain into the channel improves the drain current for wide transistors due to the boost of hole mobility, the gate stack engineering has to be further studied in order to solve the threshold voltage shift. The relaxed channel achieves a lower subthreshold swing compared to the strained one, since the latter presents a higher source/drain leakage current. Considering a figure of merit for analog applications, i.e., intrinsic voltage gain AV, no relevant difference between the relaxed and strained channel performances has been shown for short devices while the relaxed ones present a higher Av for longer devices.
Description
Keywords
FinFET, germanium, p-type, strained, relaxed
Language
English
Citation
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 180-183, 2017.
