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Dielectric properties of pure and lanthanum modified bismuth titanate thin films

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dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorPianno, R. F. [UNESP]
dc.contributor.authorRiccardi, C. S. [UNESP]
dc.contributor.authorCavalcante, L. S.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:33:42Z
dc.date.available2014-05-20T15:33:42Z
dc.date.issued2008-04-24
dc.description.abstractWe investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.en
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Fisico Quim, Lab Interdisciplinar & Ceram, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUniversidade Federal de São Carlos (UFSCar), Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 São Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Fisico Quim, Lab Interdisciplinar & Ceram, BR-14801907 Araraquara, SP, Brazil
dc.format.extent66-71
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2006.12.066
dc.identifier.citationJournal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 454, n. 1-2, p. 66-71, 2008.
dc.identifier.doi10.1016/j.jallcom.2006.12.066
dc.identifier.issn0925-8388
dc.identifier.lattes3573363486614904
dc.identifier.urihttp://hdl.handle.net/11449/42256
dc.identifier.wosWOS:000255215000015
dc.language.isoeng
dc.publisherElsevier B.V. Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.ispartofjcr3.779
dc.relation.ispartofsjr1,020
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectthin filmsen
dc.subjectchemical synthesisen
dc.subjectdielectric responseen
dc.subjectdisordered structureen
dc.titleDielectric properties of pure and lanthanum modified bismuth titanate thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V. Sa
dspace.entity.typePublication
unesp.author.lattes3573363486614904
unesp.author.lattes0173401604473200[3]
unesp.author.orcid0000-0003-2192-5312[3]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentMateriais e Tecnologia - FEGpt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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