Publicação: Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Trabalho apresentado em evento
Direito de acesso
Acesso aberto

Resumo
Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.
Descrição
Palavras-chave
Chemical method, Ferroelectric, Microstructure, SrBi2Ta2O9, Thin films, Crystallography, Dielectric properties, Optical properties, Scanning electron microscopy, Substrates, X ray diffraction analysis, Microstructural evaluations, Strontium bismuth tantalate thin films, Strontium compounds
Idioma
Inglês
Como citar
Ferroelectrics, v. 271, p. 259-264.