Publicação:
DC method for self-heating estimation applied to FinFET

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dc.contributor.authorMori, C. A.B. [UNESP]
dc.contributor.authorAgopian, P. G.D.
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-06T15:25:51Z
dc.date.available2019-10-06T15:25:51Z
dc.date.issued2018-10-26
dc.description.abstractThis paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the worst case, a difference of 5.6% was observed on the estimation of the transistors channel temperature when compared to a traditional method.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2018.8511639
dc.identifier.citation33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511639
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85057371295
dc.identifier.urihttp://hdl.handle.net/11449/187113
dc.language.isoeng
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectFinFET
dc.subjectSelf-heating effect
dc.subjectSemiconductor-On-Insulator
dc.titleDC method for self-heating estimation applied to FinFETen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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