Optical characterization of cubic AlGaN/GaN quantum wells
Loading...
Files
External sources
External sources
Date
Advisor
Coadvisor
Graduate program
Undergraduate course
Journal Title
Journal ISSN
Volume Title
Publisher
Wiley-Blackwell
Type
Article
Access right
Acesso restrito
Files
External sources
External sources
Abstract
Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.
Description
Keywords
Language
English
Citation
Physica Status Solidi A-applied Research. Weinheim: Wiley-v C H Verlag Gmbh, v. 192, n. 1, p. 129-134, 2002.
